Correlation of luminescence measurements to the structural characterization of Pr3+-doped HfSiOx

Luminescence and structural properties of Pr3+ doped HfSiOx thin layer elaborated by magnetron sputtering have been investigated as a function the annealing temperature. The emission ions were studied using photoluminescence (PL) cathodoluminescence (CL) spectroscopies. Phase separation between amorphous SiO2 crystallized HfO2 nano-grains occurring in matrix has atom probe tomography transmission electron microscopy with particular consideration for Pr distribution. Both PL CL measurements evidenced strong originating from visible range an temperature higher than 950°C. At 950°C, are clearly located cubic structure. Regarding PL, no significant changes observed 950°C 1050°C. However, revealed new peaks infrared after at 1050°C, corresponding to appearance orthorhombic crystalline structure layer. signal evolution treatment is discussed regard properties.